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The future development trend of China's semiconductor diode industry

1. Wide-bandgap semiconductor materials gradually become popular

With the continuous development of technology, profound changes have taken place in the semiconductor diode industry, and new materials will become the new development focus of the industry. New material semiconductors represented by materials such as silicon carbide (SiC) and gallium nitride (GaN) have attracted industry attention due to their excellent performance such as wide band gap, high saturation drift speed, and high critical breakdown electric field. They are expected to become a new type of semiconductors. Wide bandgap semiconductor materials exhibit good material properties in practical applications. Due to technical limitations and high manufacturing costs, they are currently only appearing in high-end application scenarios. With the maturity of future technology, the manufacturing cost of wide-bandgap semiconductor materials will be further reduced, and will gradually become the mainstream product material in the semiconductor diode industry in the future.

2. Extend to higher value-added links

Scale advantage is an important means for companies in the semiconductor diode industry to control costs and improve their competitiveness. Therefore, low-end small and medium-sized enterprises that do not have scale advantages will find it difficult to continuously invest in R&D and market development, and it is difficult to survive in the industry. In recent years, China's semiconductor diode industry has increased its integration efforts, small companies have gradually withdrawn, and market concentration has gradually increased.

However, the process flow with high technical barriers and high product added value in the chip epitaxial link is in a disadvantageous position relative to the international leading level. The current market concentration of China's semiconductor diode industry is gradually increasing. With sufficient funds, companies have gradually increased their R&D investment. Especially in the SiC field, most large diode companies have capital arrangements. In addition, China's semiconductor diode packaging technology is at an internationally leading level, and the high standards of the packaging industry will in turn promote the accelerated development of the semiconductor diode chip industry, which in turn will drive the development of the entire industry and extend to higher value-added links.

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We are WEE, We Enhance Efficiency 

More and more customers choose WEE Technology as alternative of Kemet, Diodes, and AVX etc. 

While some famous brands don't produce RS1M fast recovery rectifier in SMAF pacakge. WEE continuously expand production scale and back you up all the time.

WEE RS1M fast recovery rectifier features:

Reverse voltage - 50 to 1000 Volts            

Forward current - 1.0 Ampere

Glass passivated die construction             

Surface mounted applications

Fast recovery time for high efficiency         

Surge overload rating to 30A peak

Lead-free finish, RoHS Compliant

High temperature soldering guaranteed: 250 C/10 seconds at terminals

WEE RS1M fast recovery rectifier details:

Material: GPP chip

Packing: T/R (turntable roll)

Quantity: 10Kpcs /roll

Supply: 200KKpcs/month

Supplier device package: SMAF (DO-214AC, also known as SMA)

Type: RS1A, RS1B, RS1D,  RS1G, RS1J, RS1K, RS1M

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Written by WEE Technology Company Limited