WEET MOSFETs N-P Channel TO-251-4R TO-252-4R TO-220A Insulated TO-220B Non-Insulaed TO-220F Insulate

MOSFET stands for Metal Oxide Silicon Field Effect Transistor or Metal Oxide Semiconductor Field Effect Transistor. This is also called as IGFET meaning Insulated Gate Field Effect Transistor. The FET is operated in both depletion and enhancement modes of operation.

What are MOSFETs used for?
The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device that is widely used for switching purposes and for the amplification of electronic signals in electronic devices.

How do MOSFETs work?
In general, the MOSFET works as a switch, the MOSFET controls the voltage and current flow between the source and drain. The working of the MOSFET depends on the MOS capacitor, which is the semiconductor surface below the oxide layers between the source and drain terminal.

Are all MOSFETs the same?
All MOSFETs are FETs, not all FETs are MOSFETs. But the term is so common that things that are not actually MOSFETs are still called "MOSFETs", so there isn't really much difference; the terms are kind of interchangeable.

What are the types of MOSFETs?
There are two classes of MOSFETs. There is depletion mode and there is enhancement mode. Each class is available as n- or a p-channel, giving a total of four types of MOSFETs. Depletion mode comes in an N or a P and an enhancement mode comes in an N or a P.

Why N channel is better than P channel Mosfet?
The N-channel MOSFET has several advantages over the P-channel MOSFET. For example, the N-channel majority carriers (electrons) have a higher mobility than the P-channel majority carriers (holes). Because of this, the N-channel transistor has lower RDS(on) and gate capacitance for the same die area.

Is N channel NPN or PNP?
An N-Channel mosfet needs a positive Gate - Source voltage to conduct. An P-Channel mosfet needs a negative Gate - Source voltage to conduct. An NPN transistor needs a positive Base - Emitter current to conduct. An PNP transistor needs a negative Base - Emitter current to conduct.

Is 2N7000 NPN or PNP?
2N7000 is a N-channel mosfet. NPN or PNP indicated BJT type transistor. unlike BJTs mosfets are symmetrical devices and S and D is actually defined by connection of the bulk. in case of 3-pin packaged mosfets, you no longer have control of how the bulk is connected so make sure to verify pinout using correct datasheet.


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WEET BC368 NPN BC369 PNP Amplifier Transistors Through Hole TO-92 ISO ROHS REACH Certified

BC368 NPN:
Product Category: Bipolar Transistors - BJT         
Mounting Style: Through Hole     
Package / Case: TO-92-3     
Transistor Polarity: NPN     
Configuration: Single     
Collector- Emitter Voltage VCEO Max: 0 V     
Collector- Base Voltage VCBO: 25 V     
Emitter- Base Voltage VEBO: 5 V     
Collector-Emitter Saturation Voltage: 0.5 V     
Maximum DC Collector Current: 1 A     
Pd - Power Dissipation: 625 mW     
Gain Bandwidth Product fT: 65 MHz     
Minimum Operating Temperature: - 55 C     
Maximum Operating Temperature: + 150 C     
DC Current Gain hFE Max: 50 at 5 mA, 10 V     
Height: 4.01 mm     
Length: 4.77 mm     
Technology: Si     
Width: 2.41 mm         
Continuous Collector Current: 2 A     
Product Type: BJTs - Bipolar Transistors     
Subcategory: Transistors     
Unit Weight: 0.46g

BC369 PNP:
Product Category: Bipolar Transistors - BJT     
Mounting Style: Through Hole     
Package / Case: TO-92-3     
Transistor Polarity: PNP     
Configuration: Single     
Collector- Emitter Voltage VCEO Max: 20 V     
Collector- Base Voltage VCBO: 25 V     
Emitter- Base Voltage VEBO: 5 V     
Collector-Emitter Saturation Voltage: - 0.5 V     
Maximum DC Collector Current: 1 A     
Pd - Power Dissipation: 625 mW     
Gain Bandwidth Product fT: 65 MHz     
Minimum Operating Temperature: - 55 C     
Maximum Operating Temperature: + 150 C     
DC Current Gain hFE Max: 50 at 5 mA, 10 V     
Height: 4.01 mm     
Length: 4.77 mm     
Technology: Si     
Width: 2.41 mm         
Continuous Collector Current: 1.5 A     
Product Type: BJTs - Bipolar Transistors     
Subcategory: Transistors     
Unit Weight: 0.46g

product support: https://weetcl.com/Products/ 
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WEET PNP Silicon Epitaxial Planar Transistors MMBT9015B MMBT9015C MMBT9015D MMBT9018G MMBT9018H

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What are Small Signal Transistors?
As a design note, small signal transistors are used primarily when amplifying small signals, such as a few volts and only when using milliamperes of current.
small signal transistors come in NPN and PNP forms, are used to amplify low-level signals, can also be used as a switch.
Typical hFE values range from 10 to 500, with maximum Ic ratings from about 80 to 600mA.
Maximum operating frequencies range from about 1 to 300 MHz.
Popular small signal transistors: https://weetcl.com/Small_Signal_Transistors/ 
SOT-23(TO-236) MMBT9018 (MMBT9018G, MMBT9018H) NPN Silicon Epitaxial Planar Transistors 30V Small Signal Bipolar (BJT) Transistors
Spec.: https://weetcl.com/pdf/WEET_Transistors_SOT-23_MMBT9018.pdf 

Absolute   Maximum Ratings (Ta = 25 OC)

Parameter 

Symbol

Unit

MMBT9018

Collector Base Voltage 

-VCBO

V

30

Collector Emitter Voltage 

-VCEO

V

15

Emitter Base Voltage 

-VEBO 

V

5

Collector Current 

-IC 

mA 

50

Power   Dissipation

Ptot 

mW 

200

Junction Temperature 

Tj 

O

150

Storage Temperature Range 

TStg

O

-55+150

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WEET PNP Silicon Epitaxial Planar Transistors MMBTSC945L MMBTSC945O MMBTSC945P MMBTSC945Y

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SOT-23(TO-236) MMBTSC945 (MMBTSC945R, MMBTSC945O, MMBTSC945Y, MMBTSC945P, MMBTSC945L) 60V General Bipolar (BJT) Transistors
Spec.: https://weetcl.com/pdf/WEET_Transistors_SOT-23_MMBTSC945.pdf 

Absolute   Maximum Ratings (Ta = 25 OC)

Parameter 

Symbol

Unit

MMBTSC945

Collector Base Voltage 

-VCBO

V

60

Collector Emitter Voltage 

-VCEO

V

50

Emitter Base Voltage 

-VEBO 

V

5

Collector Current 

-IC 

mA 

150

Power   Dissipation

Ptot 

mW 

200

Junction Temperature 

Tj 

O

150

Storage Temperature Range 

TStg

O

-55+150

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WEET Silicon Epitaxial Planar Transistors MMBT9012G MMBT9012H MMBT9013G MMBT9013H MMBT9014B MMBT9014

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WEET Silicon Epitaxial Planar Transistors MMBT9012G MMBT9012H MMBT9013G MMBT9013H MMBT9014B MMBT9014C MMBT9014D

Spec.:
SOT-23(TO-236) MMBT9012 (MMBT9012G, MMBT9012H) PNP Silicon Epitaxial Planar Transistors Small Signal (BJT) Transistors
https://weetcl.com/pdf/WEET_Transistors_SOT-23_MMBT9012.pdf 
SOT-23(TO-236) MMBT9013 (MMBT9013G, MMBT9013H) SMT NPN Transistor 30V to 50V Dual Transistors Small Signal (BJT) Transistors
https://weetcl.com/pdf/WEET_Transistors_SOT-23_MMBT9013.pdf 
SOT-23(TO-236) MMBT9014 (MMBT9014B, MMBT9014C, MMBT9014D) NPN 50V Power Transistors Dual Transistors Small Signal (BJT) Transistors
https://weetcl.com/pdf/WEET_Transistors_SOT-23_MMBT9014.pdf   

Absolute   Maximum Ratings (Ta = 25 OC)

Parameter 

Symbol

Unit

MMBT9012

MMBT9013

MMBT9014

Collector Base Voltage 

-VCBO

V

40

40

50

Collector Emitter Voltage 

-VCEO

V

30

30

45

Emitter Base Voltage 

-VEBO 

V

5

5

5

Collector   Current 

-IC 

mA 

500

500

100

Power Dissipation

Ptot 

mW 

200

200

200

Junction   Temperature 

Tj 

O

150

150

150

Storage   Temperature Range 

TStg

O

-55+150

-55+150

-55+150

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WEET PNP Silicon General Transistors SOT-23 BC857A BC857B BC857C BC858A BC858B BC858C BC859A BC859B

WEE Technology Company Limited
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WEET PNP Silicon General Transistors SOT-23 BC857A BC857B BC857C BC858A BC858B BC858C BC859A BC859B BC859C
Spec.: https://weetcl.com/pdf/WEET_Transistors_SOT-23_BC856_THRU_BC860.pdf 

Absolute   Maximum Ratings (Ta = 25 OC)

Parameter 

Symbol

Unit

BC856 

BC857, BC860

BC858, BC859

Collector Base Voltage 

-VCBO

V

80

50

30

Collector Emitter Voltage 

-VCEO

V

65

45

30

Emitter Base Voltage 

-VEBO 

V

5

5

5

Collector   Current 

-IC 

mA 

100

100

100

Peak Collector Current 

-ICM

mA 

200

200

200

Power Dissipation

Ptot 

mW 

200

200

200

Junction   Temperature 

Tj 

O

150

150

150

Storage   Temperature Range 

TStg

O

-65+150

-65+150

-65+150

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WEET NPN Silicon Epitaxial Planar Transistors SOT-23 BC848A BC848B BC848C BC849A BC849B BC849C

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WEET NPN Silicon Epitaxial Planar Transistors SOT-23 BC848A BC848B BC848C BC849A BC849B BC849C
Spec.: https://weetcl.com/pdf/WEET_Transistors_SOT-23_BC846_THRU_BC850.pdf
Transistors Package Type:       
TO-3               TO-3 is a transistor outline (TO) package.        
TO-8               TO-8 is a transistor outline (TO) package.       
TO-39             TO-39 is a transistor outline (TO) package.       
TO-92             TO-92 is a single in-line, transistor outline (TO) package that is often used for low power devices. One of the oldest power packages, TO-92 is suitable for applications in office and communication equipment.        
TO-202           TO-202 is a transistor outline (TO) package.        
TO-220           TO-220 is a transistor outline (TO) package that is suitable for high-power, medium-current, and fast-switching power devices. TO-220 is used in home appliances, office and industrial equipment, and personal and consumer electronics. A package variant, TO-220 Full Pack, includes a fully encapsulated heat sink that does not require extra hardware for electrical isolation. TO-220 Full Pack has the same footprint as TO-220, provides electrical isolation up to 5 KV, and is often used in motor drive applications and power supplies.       
TO-223          TO-223 is a transistor outline (TO) package.        
TO-237          TO-237 is a transistor outline (TO) package.        
TO-247          TO-247 is a large, throughhole, transistor outline (TO) package. TO-247 provides excellent power dissipation and is ideal for metal oxide semiconductor field effect transistors (MOSFETs), high power bipolar transistors, and insulated gate bipolar transistors (IGBTs).       
TO-263          TO-263 is the surface-mount version of the TO-220 package. TO-263 is a transistor outline (TO) package with 2, 3, 5, 6, or 7 leads. TO-263 can accommodate large dice because of its large pad design. It is suitable for high-power applications due to its low resistance. Typical applications for TO-263 include home appliances and personal computers.      
SO-8               SO-8 is a small outline (SO) package.        
SOT3               SOT3 is a small outline transistor (SOT) package with three leads.        
SOT23             SOT23 is a rectangular, surface-mounted, small outline transistor (SOT) package with three or more gull wing leads. SOT23 features a very small footprint and is optimized for the highest possible current. Because of its low cost and low profile, SOT23 is used in home appliances, office and industrial equipment, personal computers, printers, and communication equipment.        
SOT25              SOT25 is a surface-mounted, small outline transistor (SOT) package with three leads.         
SOT26              SOT26 is a plastic, surface-mounted, small outline transistor (SOT) package with three leads.        
SOT82              SOT82 is a rectangular, surface-mounted, small outline transistor (SOT) package with three leads. SOT82 is larger than DPAK and smaller than TO-220, but still comparable to TO-220 in performance. SOT82 lead frames are available in full nickel or selective silver plating and allow wire bonding with gold or aluminum wire. Often, SOT82 is used in over-voltage protection devices in telecommunications equipment. SOT82 is also used to package high-power rectifiers, DC to AC converters (DACs) and frequency converters.        
SOT89               SOT89 is a plastic, surface-mounted, small outline transistor (SOT) package with three leads and a collector pad for good heat transfer. Unlike other packages, SOT89 lead posts are up-set and not down-set. SOT89 is designed for medium power and high-speed switching applications. It is also used in applications that feature very low RDS (on), no secondary breakdown, and direct interface to complementary metal oxide semiconductor (CMOS) and transistor-transistor logic (TTL).       
SOT123              SOT123 is a flanged, ceramic, surface-mounted, small outline transistor (SOT) package with two mounting holes and four leads.        
SOT143              SOT143 is a plastic, surface-mounted, small outline transistor (SOT) package with four leads.       
SOT223              SOT223 is a plastic, surface-mounted, small outline transistor (SOT) package with four leads and a heat sink. During soldering, the formed leads absorb thermal stress and eliminate the possibility of damage to the die. The encapsulation material enhances device reliability, allowing SOT223 to provide excellent performance in environments with high temperatures and humidity levels. SOT223 provides power dissipation of 1-1.5 W.       
SOT323              SOT323 is a plastic, surface-mounted, small outline transistor (SOT) package with three leads.       
TO-251 / TO-252 TO-251 and TO-252 are low-to-medium-power packages that feature a transistor outline (TO). TO-251 uses throughhole technology (THT). TO-252 uses surface-mount technology (SMT). Both packages provide several lead frame choices and are commonly used in home appliances, personal computers, lighting, and automotive systems.           
FPAK                  Flat package (FPAK).       
Other                 Other unlisted or proprietary packages.  
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WEET Silicon Epitaxial Planar Transistors MMBT3904 MMBT3906 MMBT8050C MMBT8050D MMBT8550C MMBT8550D

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WEET PNP Silicon Epitaxial Planar Transistors MMBT3904 MMBT3906 MMBT8050C MMBT8050D MMBT8550C MMBT8550D
Spec.:
SOT-23(TO-236) MMBT3904 General Purpose Transistors NPN Transistor 350mW PNP Small Signal Bipolar (BJT) Transistors
https://weetcl.com/pdf/WEET_Transistors_SOT-23_MMBT3904.pdf 
SOT-23(TO-236) MMBT3906 General Purpose Transistors PNP Transistor 350mW PNP Small Signal Bipolar (BJT) Transistors
https://weetcl.com/pdf/WEET_Transistors_SOT-23_MMBT3906.pdf 
SOT-23(TO-236) MMBT8050 (MMBT8050C, MMBT8050D) General Purpose Transistors 40V SMD NPN Bipolar (BJT) Transistors
https://weetcl.com/pdf/WEET_Transistors_SOT-23_MMBT8050.pdf 
SOT-23(TO-236) MMBT8550 (MMBT8550C, MMBT8550D) SMD Small Signal Transistor Bipolar (BJT) Switch Transistors
https://weetcl.com/pdf/WEET_Transistors_SOT-23_MMBT8550.pdf 

Absolute Maximum Ratings (Ta = 25 OC)

Parameter 

Symbol

Unit

MMBT3904

MMBT3906

MMBT8050

MMBT8550

Collector Base Voltage 

-VCBO 

V

60

40

40

40

Collector Emitter Voltage 

-VCEO

V

40

40

25

25

Emitter Base Voltage 

-VEBO 

V

6

6

6

6

Collector   Current 

-IC 

mA 

200

200

600

600

Power Dissipation

Ptot 

mW 

350

350

350

350

Junction   Temperature 

Tj 

OC 

150

150

150

150

Storage   Temperature Range 

TStg

OC 

-55+150

-55+150

-55+150

-55+150

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WEET PNP Silicon Epitaxial Planar Transistors MMBT3904 MMBT3906

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MMBT3904 and MMBT3906 are general-purpose transistors characterized by continuously adjustable voltage, low dynamic output resistance, flat temperature characteristics, and low output voltage noise.

Name of Product: MMBT3904 MMBT3906
Product Category: Bipolar Transistors - BJT
Transistor type: general small signal
Mounting Style: SMD/SMT
Transistor polarity: PNP
Configuration: Single
Voltage, Vceo: 40V
Power consumption, Pd: 350mW
Package Type: SOT-23
Packaging: Tape Reel
Factory Pack Quantity: 3000
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WEET PNP Silicon Epitaxial Planar Transistors SOT-23 BC856 BC857 BC858 BC859 BC860

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WEET Transistors SOT-23 BC856 BC857 BC858 BC859 BC860  
Specs.: https://www.weetcl.com/pdf/WEET_Transistors_SOT-23_BC856_THRU_BC860.pdf 

Series: BC856 BC857 BC858 BC859 BC860
Manufacturer: WEET
Product Category: Bipolar Transistors - BJT
Mounting Style: SMD/SMT
Package / Case: SOT-23
Transistor Polarity: PNP
Configuration: Single
Collector- Base Voltage VCBO Max: 80V for BC856 ; 50V for BC857/BC860 ; 30V for BC858/BC8659
Collector- Emitter Voltage VCEO Max: 65V for BC856 ; 45V for BC857/BC860 ; 30V for BC858/BC8659
Emitter- Base Voltage VEBO: 5V
Maximum DC Collector Current: 200mA
Gain Bandwidth Product fT: 100MHz
Operating Temperature Range: - 65 C + 150 C
Pd - Power Dissipation: 200mW
Packaging: Tape Reel
Factory Pack Quantity: 3000
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WEET NPN Transistors SOT-23 BC846 BC847 BC848 BC849 BC850

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WEET Transistors SOT-23 BC846 BC847 BC848 BC849 BC850  
As complementary types the PNP transistors BC856 BC857 BC858 BC859 BC860 are recommended.

Specs.https://www.weetcl.com/pdf/WEET_Transistors_SOT-23_BC846_THRU_BC850.pdf 

Series: BC846 BC847 BC848 BC849 BC850
Manufacturer: WEET
Product Category: Bipolar Transistors - BJT
Mounting Style: SMD/SMT
Package / Case: SOT-23
Transistor Polarity: NPN
Configuration: Single
Collector- Base Voltage VCBO Max: 80V for BC846 ; 50V for BC847/BC850 ; 30V for BC848/BC849
Collector- Emitter Voltage VCEO Max: 65V for BC846 ; 45V for BC847/BC850 ; 30V for BC848/BC849
Emitter- Base Voltage VEBO: 5V
Maximum DC Collector Current: 200mA
Gain Bandwidth Product fT: 100MHz
Operating Temperature Range: - 65 C + 150 C
Pd - Power Dissipation: 300mW

Packaging: Tape Reel
Factory Pack Quantity: 3000
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WEET PNP Transistors SOT-23 BC807 BC808 BC807 and BC808

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WEET Transistors SOT-23 BC807/BC808, BC817/BC818
These transistors are subdivided into three groups -16, -25, -40 according to their current gain.   
the PNP transistors BC807 and BC808 are recommended as complementary types of BC817 and BC818.
the NPN transistors BC817 and BC818 are recommended as complementary types of BC807 and BC808.

Specs.: https://www.weetcl.com/pdf/WEET_Transistors_SOT-23_BC807_BC808.pdf 
https://www.weetcl.com/pdf/WEET_Transistors_SOT-23_BC817_BC818.pdf 

Series: BC807/BC808, BC817/BC818
Manufacturer: WEET
Product Category: Bipolar Transistors - BJT
Mounting Style: SMD/SMT
Package / Case: SOT-23
Transistor Polarity: PNP for BC807/BC808, NPN for BC817/BC818

Configuration: Single
Collector- Base Voltage VCBO Max: 50V for BC807/BC817 ; 35V for BC808/BC818
Collector- Emitter Voltage VCEO Max: 45V for BC807/BC817 ; 25V for BC808/BC818
Emitter- Base Voltage VEBO: 5V
Maximum DC Collector Current: 500mA
Gain Bandwidth Product fT: 80MHz for BC807/BC808; 100MHz for BC817/BC818
Operating Temperature Range: - 55 C + 150 C
Pd - Power Dissipation: 300mW
Packaging: Tape Reel
Factory Pack Quantity: 3000
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