WEE Technology Company Limited
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In
high frequency, high current rectification, and freewheeling circuits, a
fast recovery diode (FBR), an ultra fast recovery diode (SRD), and a
Schottky diode (SBD) are widely used.
Fast recovery, Ultra/Super fast recovery diode structure:
The
internal structure of the fast recovery diode is different from that of
a normal diode. It adds a base region I between the P-type and N-type
silicon materials to form a P-I-N silicon wafer. Since the base region
is very thin, the reverse recovery charge is small, which not only
greatly reduces the trr value, but also reduces the transient forward
voltage drop, so that the tube can withstand a high reverse operating
voltage. The reverse recovery time of the fast recovery diode is
typically several hundred nanoseconds, the forward voltage drop is about
0.6V, the forward current is several amps to several thousand amps, and
the reverse peak voltage can be several hundred to several thousand
volts. The reverse recovery charge of the Ultra fast recovery diode is
further reduced, making its trr as low as tens of nanoseconds.
WEET popular 1A-5A surface mount super fast recovery rectifiers:
1A: ES1A-ES1J 50V-600V SMA(DO-214AC)/SMB(DO-214AA) reverse recovery time: 35nS
https://weetcl.com/pdf/WEET_SMA_ES1A_THRU_ES1J.pdf
https://weetcl.com/pdf/WEET_SMB_ES1AB_THRU_ES1JB.pdf
2A: ES2A-ES2J 50V-600V SMA(DO-214AC)/SMB(DO-214AA) reverse recovery time: 35nS
https://weetcl.com/pdf/WEET_SMA_ES2A_THRU_ES2J.pdf
https://weetcl.com/pdf/WEET_SMB_ES2A_THRU_ES2J.pdf
3A: ES3A-ES3J 50V-600V SMB(DO-214AA)/SMC(DO-214AB) reverse recovery time: 35nS
https://weetcl.com/pdf/WEET_SMB_ES3A_THRU_ES3J.pdf
https://weetcl.com/pdf/WEET_SMC_ES3A_THRU_ES3J.pdf
5A: ES5A-ES5J 50V-600V SMB(DO-214AA)/SMC(DO-214AB) reverse recovery time: 35nS
https://weetcl.com/pdf/WEET_SMC_ES5A_THRU_ES5J.PDF
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Written by WEE Technology Company Limited